以碳化硅肖特基势垒二极管作为反并联二极管，与IGBT相组合，可拓展 IGBT 的能力，同时大幅降低导通损耗（Eon）和总开关损耗。续流的 SiC 肖特基势垒二极管可大幅降低开关损耗，同时dv/dt和di/dt值几乎不变。
快速、轻松、即插即用地替换650 V TRENCHSTOP™5 IGBT设计，使得可将每10 kHz 开关频率的效率提高0.1%，这意味着如果某个应用的开关速度是 23 kHz，其效率即可提高大约 0.23%。使用4引开尔文-发射极封装的CoolSiC™混合单管，还可进一步降低开关损耗，从而实现更大幅度的效率提升。
| Technology | Voltage Class max [V] | IC @ 100° max [A] | VCE(sat) [V] | Qualification | IF max [A] | Package |
| IGBT TRENCHSTOP™ 5 + CoolSiC Schottky Diode Gen5 | 650 | 46 | Automotive | 40 | ||
| IGBT TRENCHSTOP™ 5 Silicon Carbide Schottky Diode | 650 | 75 | 1.65 | Industrial | 30.7 | TO-247-3 |
| IGBT TRENCHSTOP™ 5 Silicon Carbide Schottky Diode | 650 | 46 | 1.65 | Industrial | 18.5 | TO-247-3 |
| IGBT TRENCHSTOP™ 5 Silicon Carbide Schottky Diode | 650 | 80 | 1.35 | Industrial | 57 | TO-247-3 |
| Silicon Carbide Schottky Diode IGBT TRENCHSTOP™ 5 | 650 | 60.5 | 1.35 | Industrial | 38.5 | TO-247-3 |
| IGBT TRENCHSTOP™ 5 Silicon Carbide Schottky Diode | 650 | 46 | 1.65 | Industrial | 18.5 | TO-247-4 |
| IGBT TRENCHSTOP™ 5 Silicon Carbide Schottky Diode | 650 | 80 | 1.65 | Industrial | 57 | TO-247-4 |
| IGBT TRENCHSTOP™ 5 Silicon Carbide Schottky Diode | 650 | 56 | 1.65 | Industrial | 22.8 | TO-247-3 |
| Silicon Carbide Schottky Diode IGBT TRENCHSTOP™ 5 | 650 | 75 | 1.65 | Industrial | 30.7 | TO-247-4 |
| Silicon Carbide Schottky Diode IGBT TRENCHSTOP™ 5 | 650 | 56 | 1.65 | Industrial | 22.8 | TO-247-4 |
| IGBT TRENCHSTOP™ 5 Silicon Carbide Schottky Diode | 650 | 60.5 | 1.65 | Industrial | 38.5 | TO-247-4 |
