STGSB200M65DF2AG
Automotive-grade trench gate field-stop, 650 V, 200 A low-loss M series IGBT in an ACEPACK SMIT package
ACEPACK SMIT封装中的汽车级沟槽栅极场阻，650 V，200 A低损耗M系列IGBT
产品概述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting power package offers a low thermal resistance coupled with a electrical isolated top side thermal pad.
该器件是一种IGBT，采用先进的专有沟槽栅极场阻结构。该设备是M系列IGBT的一部分，代表了逆变器系统性能和效率之间的最佳平衡，其中低损耗和短路功能至关重要。此外，正的VCE（sat）温度系数和紧密的参数分布使并联运行更安全。得益于DBC基板，ACEPACK SMIT表面安装电源包提供了一个低热阻，并配有一个电气隔离的顶部散热片。
所有功能：
AEC-Q101 qualified
6 μs of minimum short-circuit withstand time
VCE(sat) = 1.65 V (typ.) @ IC = 200 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Maximum junction temperature: TJ = 175 °C
Dice on direct bond copper (DBC) substrate
Isolation rating of 3400 Vrms/min
UL recognition: UL 1557 file E81734
AEC-Q101合格
6μs的最小短路耐受时间
VCE（sat）=1.65 V（典型值）@IC=200 A
紧参数分布
正VCE（sat）温度系数
低热阻
最高结温：TJ=175°C
直接键合铜（DBC）衬底上的骰子
隔离等级为3400 Vrms/min
UL识别：UL 1557文件E81734
